Semiconductor device and manufacturing method thereof

US12205945B2 · kind B2 · utility

Assignee

• INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD. · CN

Inventors

• Danfeng Mao · Zhuhai, CN
• King-Yuen Wong · Issaquah, US
• Jinhan Zhang · Suzhou, CN
• Xiaoyan Zhang · Shanghai, CN
• Wei-Ya Wang · Nanjing, CN
• Jianjian Sheng · Suzhou, CN

Key dates

• Filing date: Nov 22, 2023
• Grant date: Jan 21, 2025
• Expiry date: Nov 22, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/84

Abstract

The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a first source electrode disposed on a first side of the first gate conductor, a first field plate disposed on a second side of the first gate conductor, a first conductive terminal and a second conductive terminal disposed on a second region of the second nitride semiconductor layer, and a resistor formed in the first nitride semiconductor layer and electrically connected between the first conductive terminal and the second conductive terminal, wherein the resistor comprises at least one conductive region.