Semiconductor device and method for fabricating the same
US12206007B2 · kind B2 · utility
0Cited by
2References
5Claims
0Family size
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Key dates
| Filing date | Jul 19, 2022 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Feb 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.