Method for homogenising the cross-section of nanowires for light-emitting diodes
US12206040B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Jun 25, 2020 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Jun 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor area of the III-V compound covering the active area. The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.