Patent · US Active

Semiconductor component with a stress compensation layer and a method for manufacturing a semiconductor component

US12206044B2 · kind B2 · utility

0Cited by

2References

12Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

André Steiner · Dresden, DE
Christine Rafael · Donaustauf, DE
Paola Altieri-Weimar · Regensburg, DE

Key dates

Filing date	Jul 31, 2019
Grant date	Jan 21, 2025
Priority date	—
Expiry date	Dec 24, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.