Method of deposition
US12207556B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2020 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Nov 17, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/90
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.