Dummy data-based read reference voltage search of NAND memory
US12211547B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 1, 2023 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Jul 26, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method can include performing a single-read operation at a read reference voltage to detect bits from memory cells. Dummy data is previously programmed into the memory cells. Original bits of the memory cells can be determined based on a default read reference voltage and known values of the dummy data. The detected bits and the original bits are compared to determine an upper-state failed bit count (FBC) corresponding to the memory cells having threshold voltages shifted from above the read reference voltage to below the read reference voltage and a lower-state FBC corresponding to the memory cells having threshold voltages shifted from below the read reference voltage to above the read reference voltage. When a difference between the upper-state FBC and the lower-state FBC being smaller than a threshold, the read reference voltage can be determined to be a best read reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.