Semiconductor device
US12211846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2024 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Jan 18, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.