Bipolar junction transistor (BJT) and fabricating method thereof
US12211910B2 · kind B2 · utility
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Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Jan 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/281
Abstract
Bipolar junction transistor (BJT) structures are provided. A BJT structure includes a semiconductor substrate, a collector region formed in the semiconductor substrate, a base region formed over the collector region, an emitter region formed over the collector region, a ring-shaped shallow trench isolation (STI) region formed in the collector region, and a base dielectric layer formed over the collector region and on opposite sides of the base region. The base dielectric layer is surrounded by an inner side wall of the ring-shaped STI region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.