Inventor · Hsinchu, TW

Tsung-Lin Lee

136Patents
16h-index
96Co-inventors
89Inventor score

Filing activity: Apr 25, 2001 → Jun 26, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9171929B2 Strained structure of semiconductor device and method of making the strained structure Electricity 534 Active
US8847293B2 Gate structure for semiconductor device Electricity 490 Active
US8497528B2 Method for fabricating a strained structure Electricity 230 Active
US8610240B2 Integrated circuit with multi recessed shallow trench isolation Electricity 189 Active
US8946828B2 Semiconductor device having elevated structure and method of manufacturing the same Electricity 82 Active
US7176084B2 Self-aligned conductive spacer process for sidewall control gate of high-speed random access memory Electricity 61 Expired
US8941153B2 FinFETs with different fin heights Electricity 40 Active
US8174073B2 Integrated circuit structures with multiple FinFETs Electricity 38 Active
US7482236B2 Structure and method for a sidewall SONOS memory device Emerging Cross-Sectional Technologies 35 Active
US8373238B2 FinFETs with multiple Fin heights Electricity 35 Active
US8110466B2 Cross OD FinFET patterning Electricity 35 Active
US8519481B2 Voids in STI regions for forming bulk FinFETs Electricity 30 Active
US9953885B2 STI shape near fin bottom of Si fin in bulk FinFET Electricity 24 Active
US8338305B2 Multi-fin device by self-aligned castle fin formation Electricity 23 Active
US8445340B2 Sacrificial offset protection film for a FinFET device Electricity 20 Active
US8748993B2 FinFETs with multiple fin heights Electricity 16 Active
US8673709B2 FinFETs with multiple fin heights Electricity 16 Active
US8653608B2 FinFET design with reduced current crowding Electricity 12 Active
US9761666B2 Strained channel field effect transistor Electricity 11 Active
US9263342B2 Semiconductor device having a strained region Electricity 11 Active
US9147594B2 Method for fabricating a strained structure Electricity 10 Active
US9847334B1 Structure and formation method of semiconductor device with channel layer Electricity 10 Active
US8723271B2 Voids in STI regions for forming bulk FinFETs Electricity 10 Active
US7133479B2 Frequency synchronization apparatus and method for OFDM systems Electricity 9 Expired
US10374059B2 Structure and formation method of semiconductor device structure with nanowires Electricity 9 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.