Reflective mask blank for EUV lithography, mask blank for EUV lithography, and manufacturing methods thereof
US12216397B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 17, 2023 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Oct 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.