Localized stress modulation by implant to back of wafer
US12217974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2021 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Mar 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.