Semiconductor device and method for fabricating the same
US12218182B2 · kind B2 · utility
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3References
16Claims
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Key dates
| Filing date | Nov 2, 2021 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Nov 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a semiconductor device capable of improving current leakage property and a method for fabricating the same. According to an embodiment of the present invention, a capacitor comprises: a lower electrode; a dielectric layer over the lower electrode; and an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer, wherein a carbon content in the conductive carbon-containing layer is more than 5 at % and equal to or less than 10 at %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.