Metal substrate structure for a semiconductor power module
US12218192B2 · kind B2 · utility
0Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2022 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Nov 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/107
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method can be used for manufacturing a metal substrate structure for a semiconductor power module. A plurality of terminals are welded to a metal top layer. After the welding, a dielectric layer is coupled between the metal top layer and a metal bottom layer. The dielectric can be laminated or molded, as examples.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.