Gradient protection layer in MTJ manufacturing

US12219879B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Tai-Yen Peng · Hsinchu, TW
• Yu-Shu Chen
• Sin-Yi Yang · Taichung, TW
• Chen-Jung Wang · Hsinchu, TW
• Chien-Chung Huang · Tainan, TW
• Han-Ting Lin · Hsinchu, TW
• Jyu-Horng Shieh · Hsinchu, TW
• Qiang Fu · Beijing, CN

Key dates

• Filing date: Nov 28, 2023
• Grant date: Feb 4, 2025
• Expiry date: Nov 28, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.