Stress reducing method
US12221693B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2023 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | May 26, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing pre-coating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.