Photonic device on a semiconductor-on-insulator substrate and method of manufacturing thereof
US12222542B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 22, 2021 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Aug 11, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a photonic device includes: forming a photonic device structure that includes a SOI substrate, which includes a bulk substrate layer, a buried oxide layer on the bulk substrate layer and an active semiconductor layer on the buried oxide layer; forming an electrically conducting layer in electrical contact of the buried oxide layer, and forming a BEOL structure on a surface of the active silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.