Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask
US12222640B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Oct 20, 2023 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Oct 20, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1): 0.625MP1+MP2≤1000 (1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.