Method of manufacturing a semiconductor device and pattern formation method
US12222643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2022 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Dec 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/033
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1≤a≤2, b≥1, c≥1, and b+c≤4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.