Patent · US Active

Apparatus and method of forming a semiconductor layer

US12224175B2 · kind B2 · utility

0Cited by

0References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Olaf Fiedler · Dresden, DE
Daniel Kai Simon · Dresden, DE

Key dates

Filing date	Oct 25, 2021
Grant date	Feb 11, 2025
Priority date	—
Expiry date	Mar 12, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/68714
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.