Method of running an etch process in higher selectivity to mask and polymer regime by using a cyclic etch process
US12224177B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Feb 8, 2022 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Mar 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure describes an improved etch selectivity of a-C mask during HAR etch processes by using a cyclic etch process. The process has two principle steps: These steps are repeated between a partial etch process (polymer creating) and polymer cleaning step (cycle etching).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.