Method for FinFet fabrication and structure thereof
US12224210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2023 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | May 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a semiconductor fin protruding from the substrate, an isolation layer disposed above the substrate, a dielectric fin with a bottom portion embedded in the isolation layer, and a gate structure over top and sidewall surfaces of the semiconductor fin and the dielectric fin. The semiconductor fin has a first sidewall and a second sidewall facing away from the first sidewall. The isolation layer includes a first portion disposed on the first sidewall of the semiconductor fin and a second portion disposed on the second sidewall of the semiconductor fin. A top portion of the dielectric fin includes an air pocket with a top opening sealed by the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.