Scalable MPS device based on SiC

US12224321B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Simone RASCUNÁ · Catania, IT
• Mario Giuseppe Saggio · Nettuno, IT

Key dates

• Filing date: Dec 7, 2023
• Grant date: Feb 11, 2025
• Expiry date: Dec 7, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126

Abstract

Merged-PiN-Schottky, MPS, device comprising: a substrate of SiC with a first conductivity; a drift layer of SiC with the first conductivity, on the substrate; an implanted region with a second conductivity, extending at a top surface of the drift layer to form a junction-barrier, JB, diode with the substrate; and a first electrical terminal in ohmic contact with the implanted region and in direct contact with the top surface to form a Schottky diode with the drift layer. The JB diode and the Schottky diode are alternated to each other along an axis: the JB diode has a minimum width parallel to the axis with a first value, and the Schottky diode has a maximum width parallel to the axis with a second value smaller than, or equal to, the first value. A breakdown voltage of the MPS device is greater than, or equal to, 115% of a maximum working voltage of the MPS device in an inhibition state.