PGaN enhancement mode HEMTs with dopant diffusion spacer

US12224337B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Michael Beumer · Portland, US
• Robert Ehlert · Portland, US
• Nicholas G. Minutillo · Beaverton, US
• Michael Robinson · Beaverton, US
• Patrick Wallace · Portland, US
• Peter Wells · Portland, US

Key dates

• Filing date: Dec 23, 2020
• Grant date: Feb 11, 2025
• Expiry date: Jun 12, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

III-N e-mode high electron mobility transistors (HEMTs) including a dopant diffusion spacer between an impurity-doped III-N material layer and a III-N polarization layer of the HEMT material stack. The spacer may be a substantially undoped III-N material, such as GaN. With the diffusion spacer, P-type impurities within the pGaN are setback from the polarization layer sufficiently to avoid significant levels of P-type impurities from entering the III-N material interface where the 2DEG resides. With the diffusion spacer, clustering of impurities near the 2DEG may be avoided and a III-N e-mode HEMT may achieve higher drive currents.