Robert Ehlert
3Patents
0h-index
14Co-inventors
25Inventor score
Filing activity: May 18, 2020 → Dec 23, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12432964B2 | Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology | Electricity | 0 | Active |
| US12224337B2 | PGaN enhancement mode HEMTs with dopant diffusion spacer | Electricity | 0 | Active |
| US11955482B2 | Source or drain structures with high phosphorous dopant concentration | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.