Power device with partitioned active regions
US12224343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2021 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Nov 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device includes a substrate, and a plurality of active regions disposed over the substrate. The plurality of active regions have a first total area. One or more inactive regions are also disposed over the substrate. The one or more inactive regions have a second total area. The second total area is greater than or equal to 1.5 times the first total area. The active regions may be formed in an epitaxial layer formed over the substrate. A plurality of cells of an active device may be disposed in the plurality of active regions. The inactive regions may include only structures that do not dissipate substantial power when the semiconductor device is functioning as it is designed to function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.