JBS device with improved electrical performances, and manufacturing process of the JBS device
US12224358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2022 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Apr 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.