Surface activated bonding method by ion or atom bombardment of a first surface of a first substrate to a second surface of a second substrate
US12227679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2023 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Jun 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0445
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface activated bonding method by ion or atom bombardment of a first surface of a first substrate to a second surface of a second substrate, the material of the first substrate at the first surface including at least two chemical species, one of which, called the species of interest, becomes depleted upon activation by ion or atom bombardment, the method including depositing a layer of the species of interest onto the first surface of the first substrate; activating the first surface by bombarding the first surface with an ion or atom beam so as to consume the entire previously deposited layer of species; and activating the second surface by bombarding the second surface with an ion or atom beam; and contacting the first surface of the first substrate with the second surface of the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.