Selective deposition of material comprising silicon and oxygen using plasma
US12227835B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2022 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Oct 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.