Reflective mask blank, reflective mask and method for manufacturing a semiconductor device
US12228852B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 4, 2023 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Dec 4, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/58
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer that is formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer that is formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.