Integrated circuit devices including a power rail and methods of forming the same
US12230571B2 · kind B2 · utility
0Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2022 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Mar 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming an integrated circuit devices may include forming a transistor on a first surface of a substrate. The transistor may include an active region, a source/drain region contacting the active region and a gate electrode on the active region. The methods may also include forming a conductive wire that is electrically connected to the source/drain region, forming a trench extending through the substrate by etching a second surface of the substrate, which is opposite the first surface of the substrate, and forming a power rail in the trench. The power rail is electrically connected to conductive wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.