Transistor device having a cell field and method of fabricating a gate of the transistor device
US12230706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2023 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Jan 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
In an embodiment, a transistor device a semiconductor substrate having a main surface, and a cell field including a plurality of transistor cells of a power transistor. The cell field further includes: a body region of a second conductivity type; a source region of a first conductivity type on or in the body region, the first conductivity type opposing the second conductivity type; a gate trench in the main surface of the semiconductor substrate; a gate dielectric lining the gate trench; a metal gate electrode arranged in the gate trench on the gate dielectric; and an electrically insulating cap arranged on the metal gate electrode. A method of fabricating a gate of the transistor device is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.