Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

US12232317B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• John D. Hopkins · Meridian, US
• Damir Fazil · Boise, US
• Michael E. Koltonski · Boise, US

Key dates

• Filing date: Feb 8, 2022
• Grant date: Feb 18, 2025
• Expiry date: Mar 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A memory array comprises strings of memory cells. The memory array comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Channel-material-string constructions of memory cells extend through the insulative tiers and the conductive tiers. The channel material of the channel-material-string constructions is directly electrically coupled to conductor material of the conductor tier. Substructure material is in the conductor tier and spans laterally-across and laterally-between bottoms of multiple of the channel-material-string constructions. The substructure material is of different composition from an upper portion of the conductor material. The substructure material comprises laterally-opposing sides that taper laterally-inward moving deeper into the conductor tier. Other embodiments, including method, are disclosed.