Semiconductor device including data storage material pattern
US12232429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2021 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Aug 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A semiconductor device includes a first conductive line on a lower structure and extending in a first horizontal direction; a second conductive line on the first conductive line and extending in a second horizontal direction, the second horizontal direction being perpendicular to the first horizontal direction; and a memory cell structure between the first conductive line and the second conductive line. The memory cell may structure include a data storage material pattern and a selector material pattern overlapping the data storage material pattern in a vertical direction. The data storage material pattern may include a phase change material layer of InαGeβSbγTeδ. In the phase change material layer of InαGeβSbγTeδ, a sum of α and β may be lower than about 30 at. %, and a sum of γ and δ may be higher than about 70 at. %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.