Methods of forming copper iodide layer and structures including copper iodide layer
US12234548B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 31, 2023 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | May 17, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.