Dynamic detection and dynamic adjustment of sub-threshold swing in a memory cell sensing circuit
US12237023B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2020 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | May 27, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
For a nonvolatile (NV) storage media such as NAND media that is written by a program and program verify operation, the system can determine an expected number of SSPC (selective slow programming convergence) cells for a page of cells for specific conditions of the page. The system can perform program verify with a first wordline (WL) select voltage for SSPC cell detection for a first write of the page to detect the expected number of SSPC cells. Based on the determined expected number of SSPC cells, the system can set a boost voltage to capture an expected number of SSPC cells during the program verify operation. The system performs program verify for subsequent writes to the page with a higher WL select voltage, to perform program verify for standard cells and then SSPC program verify with the boost voltage determined from the first write.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.