Semiconductor device and power amplifier
US12237382B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Jul 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate; a channel layer disposed on the substrate, wherein the channel layer is made of GaN; a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlzGa1-zN; and an inserting structure inserted between the channel layer and the barrier layer. The inserting structure includes: a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlxGa1-xN; and a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlyGa1-yN, and y is greater than x. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.