Wei Wang
25Patents
3h-index
69Co-inventors
66Inventor score
Filing activity: Jan 26, 2000 → Jun 28, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8155374B2 | Electroacoustic transducing device | Electricity | 12 | Active |
| US6459103B1 | Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics | Electricity | 7 | Expired |
| US9991328B2 | Tunable on-chip nanosheet resistor | Electricity | 3 | Active |
| US7385236B2 | BiFET semiconductor device having vertically integrated FET and HBT | Electricity | 2 | Active |
| US8390263B2 | Soft-start circuit having a ramp-up voltage and method thereof | Electricity | 2 | Active |
| US7948273B2 | Soft-start device | Electricity | 1 | Active |
| US10084109B1 | Semiconductor structure for improving the gate adhesion and Schottky stability | Electricity | 1 | Active |
| US11451237B2 | Sample and hold circuit and method | Electricity | 0 | Active |
| US11546002B2 | Transmitter, receiver and transceiver | Electricity | 0 | Active |
| US10431114B2 | Oceaneering test platform device for simulating oceaneering working conditions | Physics | 0 | Active |
| US12310264B2 | Phase change memory using multiple phase change layers and multiple heat conductors | Physics | 0 | Active |
| US10985236B2 | Tunable on-chip nanosheet resistor | Electricity | 0 | Active |
| US11705178B2 | Method and apparatus for determining refresh counter of dynamic random access memory (DRAM) | Emerging Cross-Sectional Technologies | 0 | Active |
| US12094516B2 | Method and apparatus for intensifying current leakage between adjacent memory cells, and method and apparatus for current leakage detection | Physics | 0 | Active |
| US12237382B2 | Semiconductor device and power amplifier | Electricity | 0 | Active |
| US11146281B2 | Multi-stage switched capacitor circuit and operation method thereof | Electricity | 0 | Active |
| US10586843B2 | Tunable on-chip nanosheet resistor | Electricity | 0 | Active |
| US10886392B2 | Semiconductor structure for improving thermal stability and Schottky behavior | Electricity | 0 | Active |
| US10833269B1 | 3D phase change memory | Electricity | 0 | Active |
| US10659070B2 | Digital to analog converter device and current control method | Electricity | 0 | Active |
| US8258865B2 | Signal generating apparatus and method thereof | Electricity | 0 | Active |
| US11852657B2 | Tester and method for calibrating probe card and device under testing (DUT) | Physics | 0 | Active |
| US9136345B1 | Method to produce high electron mobility transistors with Boron implanted isolation | Electricity | 0 | Active |
| US8619099B2 | Display device with orientation recognition unit | Physics | 0 | Active |
| US11271151B2 | Phase change memory using multiple phase change layers and multiple heat conductors | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.