Method of forming semiconductor device
US12237400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | May 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method of forming a semiconductor device includes: forming a semiconductor structure having source/drain regions, a fin disposed between the source/drain regions, and a dummy gate disposed on the fin and surrounded by a spacer; removing the dummy gate to form a gate trench which is defined by a trench-defining wall; forming a gate dielectric layer on the trench-defining wall; forming a work function structure on the gate dielectric layer; forming a resist layer to fill the gate trench; removing a top portion of the resist layer; removing the work function structure exposed from the resist layer using a wet chemical etchant; removing the resist layer; and forming a conductive gate in the gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.