Determining hot spot ranking based on wafer measurement
US12242201B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2019 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Oct 15, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/7085
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.