Method of testing semiconductor package
US12243788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2023 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Jul 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/214
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of testing a semiconductor package includes: forming a charge measurement unit over a carrier substrate; forming a first dielectric layer over the charge measurement unit; forming a first metallization layer over the dielectric layer, wherein the forming of the first metallization layer induces first charges to accumulate on the charge measurement unit; performing a first test against the charge measurement unit to determine whether breakdown occurs in the charge measurement unit; and in response to determining that no breakdown occurs in the charge measurement unit, forming a second dielectric layer over the first metallization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.