Patent · US Active

Offset pads over TSV

US12243851B2 · kind B2 · utility

1Cited by
225References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 3, 2023
Grant dateMar 4, 2025
Priority date
Expiry dateJul 3, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06544
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad may be disposed at a bonding surface of at least one of the microelectronic substrates, where the contact pad is positioned offset relative to a TSV in the substrate and electrically coupled to the TSV.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.