Patent · US Active

Low resistance current spreading to n-contacts of micro-LED array

US12243906B2 · kind B2 · utility

0Cited by
1References
21Claims
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Key dates

Filing dateNov 12, 2021
Grant dateMar 4, 2025
Priority date
Expiry dateApr 27, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/856
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A light source includes an epitaxial layer stack that includes an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. The epitaxial layer stack includes a two-dimensional (2-D) array of mesa structures formed therein. The light source further includes an array of p-contacts electrically coupled to the p-type semiconductor layer of the 2-D array of mesa structures, a metal layer in regions surrounding individual mesa structures of the 2-D array of mesa structures, and a plurality of n-contacts coupling the metal layer to the n-type semiconductor layer at a plurality of locations between the individual mesa structures of the 2-D array of mesa structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.