Low resistance current spreading to n-contacts of micro-LED array
US12243906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2021 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Apr 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light source includes an epitaxial layer stack that includes an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. The epitaxial layer stack includes a two-dimensional (2-D) array of mesa structures formed therein. The light source further includes an array of p-contacts electrically coupled to the p-type semiconductor layer of the 2-D array of mesa structures, a metal layer in regions surrounding individual mesa structures of the 2-D array of mesa structures, and a plurality of n-contacts coupling the metal layer to the n-type semiconductor layer at a plurality of locations between the individual mesa structures of the 2-D array of mesa structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.