Semiconductor device
US12245440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2022 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | May 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/364
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern, the source/drain pattern being in contact with the sheet patterns, and gate structures on opposite sides of the source/drain pattern, the gate structures being spaced apart from each other along a second direction and including gate electrodes that surround the sheet patterns, wherein the source/drain pattern includes a first epitaxial region having at least one of antimony and bismuth, the first epitaxial region having a bottom part in contact with the lower pattern, but not with the sheet patterns, and a thickness of the bottom part increasing and decreasing away from the gate structures in the second direction, and a second epitaxial region on the first epitaxial region, the second epitaxial region including phosphorus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.