Method and apparatus for controlled ion implantation
US12247283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2021 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | May 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/111
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.