Surface treatment method, method for producing semiconductor substrate including the surface treatment method, composition for surface treatment, and system for producing semiconductor substrate including the composition for surface treatment
US12249513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2022 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Jul 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a means capable of sufficiently removing a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon nitride. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon nitride using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having a negatively charged functional group and having a viscosity of an aqueous solution having a concentration of 20% by mass at 25° C. of 10 mPa·s or more and a dispersing medium, and the surface treatment method includes controlling a zeta potential of the silicon nitride and a zeta potential of the inorganic oxide abrasive grains each to −30 mV or less using the composition for surface treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.