Film structure for bond pad
US12249586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2022 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Dec 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/05432
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an interconnect structure disposed over a substrate. The interconnect structure includes a plurality of interconnect layers disposed within a dielectric structure. A bond pad structure is disposed over the interconnect structure. The bond pad structure includes a contact layer. A first masking layer including a metal-oxide is disposed over the bond pad structure. The first masking layer has interior sidewalls arranged directly over the bond pad structure to define an opening. A conductive bump is arranged within the opening and on the contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.