Patent · US Active

Ohmic contact formation in a SiC-based electronic device

US12249624B2 · kind B2 · utility

0Cited by

1References

16Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Simone RASCUNÁ · Catania, IT
Mario Giuseppe Saggio · Nettuno, IT
Giovanni Franco · San Gregorio di Catania, IT

Key dates

Filing date	Apr 8, 2021
Grant date	Mar 11, 2025
Priority date	—
Expiry date	Jun 30, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/106
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a SiC-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500° C. and 2600° C. so as to form a carbon-rich electrical-contact region at the implanted region. The carbon-rich electrical-contact region forms an ohmic contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.