Method for manufacturing a grid
US12249630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2023 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Dec 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A grid is manufactured with a combination of ion implant and epitaxy growth. The grid structure is made in a SiC semiconductor material with the steps of a) providing a substrate comprising a doped semiconductor SiC material, said substrate comprising a first layer (n1), b) by epitaxial growth adding at least one doped semiconductor SiC material to form separated second regions (p2) on the first layer (n1), if necessary with aid of removing parts of the added semiconductor material to form separated second regions (p2) on the first layer (n1), and c) by ion implantation at least once at a stage selected from the group consisting of directly after step a), and directly after step b); implanting ions in the first layer (n1) to form first regions (p1). It is possible to manufacture a grid with rounded corners as well as an upper part with a high doping level. It is possible to manufacture a component with efficient voltage blocking, high current conduction, low total resistance, high surge current capability, and fast switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.