Power device and fabrication method thereof
US12249647B2 · kind B2 · utility
0Cited by
21References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 24, 2022 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Jul 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
Abstract
A power device includes a substrate, an ion well in the substrate, a body region in the ion well, a source doped region in the body region, a drain doped region in the ion well, and gates on the substrate between the source doped region and the drain doped region. The gates include a first gate adjacent to the source doped region, a second gate adjacent to the drain doped region, and a stacked gate structure between the first gate and the second gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.