Memory device including switching material and phase change material
US12254922B2 · kind B2 · utility
0Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2023 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Jun 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.